aod514/aoi514/AOY514 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 46a r ds(on) (at v gs =10v) < 5.9m w r ds(on) (at v gs = 4.5v) < 11.9m w application 100% uis tested 100% r g tested symbol v ds v gs 30v ? latest trench power mosfet technology ? very low rds(on) at 4.5vgs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing ? isolated dc/dc converters in telecom and industri al v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage drain-source voltage 30 g d s to252 dpak topview bottom view g g d d s s d g g d d s s d top view bottom view to-251a ipak to251b (ipak short lead) v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.5 50 3 w power dissipation a p dsm w t a =70c 50 1.6 t a =25c t c =25c 2.5 25 t c =100c power dissipation b p d mj avalanche current c 13 continuous drain current 31 17 a 25 avalanche energy l=0.1mh c a t a =25c i dsm a max t a =70c i d 46 36 t c =25c t c =100c 163 pulsed drain current c continuous drain current g v 20 gate-source voltage 100ns 36 v maximum junction-to-ambient a c/w r q ja 16 41 20 units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ rev 5: nov 2012 www.aosmd.com page 1 of 6
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.6 2 2.4 v 4.3 5.9 t j =125c 5.4 7.5 8.5 11.9 m w g fs 91 s v sd 0.7 1 v i s 46 a c iss 1187 pf c oss 483 pf c rss 60 pf r g 0.7 1.5 2.3 w q g (10v) 18 nc q g (4.5v) 8.8 nc q gs 4.1 nc q gd 3.6 nc t d(on) 7.3 ns t r 10.5 ns t d(off) 21.8 ns t f 5 ns t rr 14.7 ns q rr 24 nc v ds =0v, v gs = 20v maximum body-diode continuous current g input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a dynamic parameters v gs =4.5v, i d =20a r ds(on) static drain-source on-resistance diode forward voltage m w v gs =10v, i d =20a gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v gate source charge gate drain charge total gate charge switching parameters v gs =10v, v ds =15v, i d =20a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs i d =250 m a body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime i f =20a, di/dt=500a/ m s gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge a. the value of r q ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environmen t with t a =25 c. the out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. a. the value of r q ja is measured with the device mounted on 1in fr - 4 board with 2oz. copper, in a still air environmen t with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 5: nov 2012 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e+01 1.0e+02 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 12 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 7v 10v 5v 4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 3 6 9 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 5: nov 2012 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 100 200 300 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =15v i d =20a d=t on /t t =t +p .z .r in descending order t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 10 normalized transient d=t on /t t =t +p .z .r in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss single pulse t j,pk =t c +p dm .z q jc .r q jc in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3 c/w 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse t j,pk =t c +p dm .z q jc .r q jc d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3 c/w rev 5: nov 2012 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics d=t on /t t =t +p .z .r in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to- ambient (note h) t a =25 c 10 normalized transient d=t on /t t =t +p .z .r in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t j,pk =t a +p dm .z q ja .r q ja d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =64 c/w 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impe dance (note h) single pulse on t j,pk =t a +p dm .z q ja .r q ja d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =50 c/w rev 5: nov 2012 www.aosmd.com page 5 of 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id l vds bv unclamped inductive switching (uis) test circuit & wav eforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 5: nov 2012 www.aosmd.com page 6 of 6
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